BSS7728n sipmos small-signal-transistor product summary v ds 60 v r ds(on) 5 w i d 0.2 a feature n-channel enhancement mode logic level d v /d t rated sot-23 gate pin1 drain pin 3 source pin 2 marking ssk type package ordering code tape and reel information BSS7728n sot-23 q67042-s4189 e6327: 3000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.2 0.16 a pulsed drain current t a =25c i d puls 0.8 reverse diode d v /d t i s =0.2a, v ds =48v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 3
thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - ambient at minimal footprint r thja - - 350 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 60 - - v gate threshold voltage, v gs = v ds i d =26a v gs(th) 1.3 1.9 2.3 zero gate voltage drain current v ds =60v, v gs =0, t j =25c v ds =60v, v gs =0, t j =150c i dss - - - - 0.1 5 a gate-source leakage current v gs =20v, v ds =0 i gss - 1 10 na drain-source on-state resistance v gs =4.5v, i d =0.05a r ds(on) - 4.3 7.5 w drain-source on-state resistance v gs =10v, i d =0.5a r ds(on) - 2.7 5 BSS7728n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 3
electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =0.16a 0.1 0.2 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 37 56 pf output capacitance c oss - 7.3 11 reverse transfer capacitance c rss - 2.9 4.4 turn-on delay time t d(on) v dd =30v, v gs =10v, i d =0.2a, r g =6 w - 2.7 4 ns rise time t r - 2.7 4.1 turn-off delay time t d(off) - 6.1 9.1 fall time t f - 9 13 gate charge characteristics gate to source charge q gs v dd =48v, i d =0.2a - 0.12 0.18 nc gate to drain charge q gd - 0.43 0.65 gate charge total q g v dd =48v, i d =0.2a, v gs =0 to 10v - 1 1.5 gate plateau voltage v (plateau) v dd =48v, i d = 0.2 a - 3.8 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.2 a inv. diode direct current, pulsed i sm - - 0.8 inverse diode forward voltage v sd v gs =0, i f =i s - 0.84 1.2 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 11.5 17.5 ns reverse recovery charge q rr - 2.6 4 nc BSS7728n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 3 of 3
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